NAS Semiconductor Device Modeling Program

نویسندگان

  • Bryan A. Biegel
  • M. P. Anantram
  • Toshishige Yamada
چکیده

This document describes the research plans of the MRJ Semiconductor Device Modeling Program at NAS as of September 1997. The general motivation and approach for this work is presented first. Then, for each specific project in the program, the motivation, approach, and specific plans for the contract year are described.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Behavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS

During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need for modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using Ordinary Differential Algebraic Equations (ODAEs), in addition to its support for describing discrete-event systems. For VHDL-AMS to be useful to the analog design ...

متن کامل

A Proposal for a New Method of Modeling of the Quantum Dot Semiconductor Optical Amplifiers

With the advancement of nanoscale semiconductor technology,semiconductor optical amplifiers are used to amplify and process all-optical signals. Inthis paper, with the aim of calculating the gain of quantum dot semiconductor opticalamplifier (QD-SOA), two groups of rate equations and the optical signal propagatingequation are used in the active layer of the device. For t...

متن کامل

NAS News - May-June 1997

Fullerene-based Nanoelectronic Devices Show `Tremendous Potential' Researchers at the NAS Facility are examining the role of the fullerene structure -a form of carbon -in creating electronic devices for the next century. In this article, scientists Jie Han and Subhash Saini give a bird's-eye view of the transition from conventional CMOS-based semiconductor devices to quantum devices, and discus...

متن کامل

GaN Metal-Semiconductor Field-Effect Transistor Project II

In this paper, we will discuss the modeling and simulation result of GaN MESFET device with our conventional computer added device simulator MEDICI. We will find out material parameter of GaN so that the device characteristics of simulation fit to experimentally built-on device characteristics. Then we will vary some important device parameters such as gate length, channel doping rate, and acti...

متن کامل

Parallel and Distributed Optimization in Technology Computer Aided Design

We present the simulation environment SIESTA (SIMULATION ENVIRONMENT FOR SEMICONDUCTOR TECHNOLOGY ANALYSIS) which provides facilities for time effective parallel distributed simulation. An optimization framework and its components which explore these features are described. Due to distributed simulation, the overall simulation time is drastically reduced by SIESTA. Optimizations are performed o...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1997